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ISTN Entries to the TU-Bibliography

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Number of items at this level: 184.

2019

Noll, Dennis ; Schwalke, Udo (2019):
Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors.
In: ECS Transactions, S. 41-49, 86, (9), ISSN 1938-6737,
DOI: 10.1149/08609.0041ecst,
[Online-Edition: http://ecst.ecsdl.org/content/86/9/41.abstract?sid=1c3d40c0-...],
[Article]

Krauss, Tillmann Adrian (2019):
Planar Electrostatically Doped Reconfigurable Schottky Barrier FDSOI Field-Effect Transistor Structures.
Darmstadt, Technische Universität, [Online-Edition: https://tuprints.ulb.tu-darmstadt.de/8771],
[PhD thesis]

Noll, Dennis ; Schwalke, Udo (2019):
Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing.
Mykonos, Greece, In: 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 16.-18. April 2019, DOI: 10.1109/DTIS.2019.8734953,
[Online-Edition: https://ieeexplore.ieee.org/abstract/document/8734953],
[Konferenzveröffentlichung]

Schwalke, Udo ; Noll, Dennis (2019):
Silicon-CMOS Compatible Transfer-Free Fabrication of Nanocrystalline Graphene Field-Effect Devices for Smart Gas-Sensor Applications.
Singapore, Singapore, In: Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Singapore, 12.-15.03.2019, DOI: 10.1109/EDTM.2019.8731320,
[Online-Edition: https://ieeexplore.ieee.org/abstract/document/8731320],
[Konferenzveröffentlichung]

Noll, Dennis ; Schwalke, Udo (2019):
Transfer-free fabrication of nanocrystalline graphene field-effect transistor gas sensor arrays.
Tokyo, Japan, In: 1&2DM 2019, Tokyo, Japan, 28.-29.01.2019, [Online-Edition: http://www.1and2dm.com/2020/],
[Konferenzveröffentlichung]

2018

Keyn, Martin (2018):
Untersuchung einer Herstellungstechnologie für Feldeffekt-Transistoren auf Basis von Kohlenstoffnanoröhren.
Darmstadt, Technische Universität, [Online-Edition: https://tuprints.ulb.tu-darmstadt.de/7660],
[PhD thesis]

Noll, Dennis ; Schwalke, Udo (2018):
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
Cancun, Mexico, In: AIMES 2018 /234th Meeting of the Electrochemical Society (ECS), Cancun, Mexico, 30.09.-04.10.2018, DOI: 10.1149/08615.0013,
[Online-Edition: http://ecst.ecsdl.org/search?submit=yes&submit=Submit&pubdat...],
[Konferenzveröffentlichung]

Noll, Dennis ; Schwalke, Udo (2018):
Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors.
Cancun, Mexico, In: AIMES 2018 /234th Meeting of the Electrochemical Society (ECS), Cancun, Mexico, 30.09.-04.10.2018, DOI: 10.1149/08609.0041ecst,
[Online-Edition: http://ecst.ecsdl.org/content/86/9/41.abstract?sid=1c3d40c0-...],
[Konferenzveröffentlichung]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2018):
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
In: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Taormina, Sizilien, 9-12 April 2018, DOI: 10.1109/DTIS.2018.8368567,
[Online-Edition: https://doi.org/10.1109/DTIS.2018.8368567],
[Konferenzveröffentlichung]

Noll, Dennis ; Hönicke, Philip ; Kayser, Yves ; Wagner, Stefan ; Beckhoff, Burkhard ; Schwalke, Udo (2018):
Transfer-Free In Situ CCVD Grown Nanocrystalline Graphene for Sub-PPMV Ammonia Detection.
In: ECS Journal of Solid State Science and Technology, S. Q3108-Q3113, 7, (7), ISSN 2162-8769,
DOI: 10.1149/2.0171807jss,
[Online-Edition: http://jss.ecsdl.org/content/7/7/Q3108.abstract],
[Article]

Noll, Dennis ; Schwalke, Udo (2018):
Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices.
Taormina, In: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Apr 10, 2018 - Apr 12, 2018, DOI: 10.1109/DTIS.2018.8368566,
[Online-Edition: https://ieeexplore.ieee.org/document/8368566],
[Konferenzveröffentlichung]

Noll, Dennis ; Schwalke, Udo (2018):
Direct fabrication of nanocrystalline graphene field effect transistors for gas detection.
Germany, Dresden, In: Workshop: Graphen und weitere 2D Materialien, Germany, Dresden, 02.02.2018, [Konferenzveröffentlichung]

Noll, Dennis ; Hönicke, Philip ; Beckhoff, Burkhard ; Schwalke, Udo (2018):
Ammonia Sensing Using Transfer-Free in situ CCVD Grown Nanocrystalline Graphene Field Effect Transistors.
USA, Seattle, Washington, In: 233rd Meeting of the Electrochemical Society (ECS), USA, Seattle, Washington, 13.-17.05.2018, [Online-Edition: http://ma.ecsdl.org/content/MA2018-01/10/900.abstract],
[Konferenzveröffentlichung]

Noll, Dennis ; Schwalke, Udo (2018):
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Gas Sensors.
In: ECS Transactions, S. 13-21, 86, (15), ISSN 1938-6737,
[Online-Edition: http://ma.ecsdl.org/content/MA2018-02/56/2004.abstract],
[Article]

Noll, Dennis ; Schwalke, Udo (2018):
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
In: ECS Transactions, S. 13-21, 86, (15), ISSN 1938-6737,
DOI: 10.1149/08615.0013,
[Online-Edition: http://ecst.ecsdl.org/search?submit=yes&submit=Submit&pubdat...],
[Article]

Schwalke, Udo ; Noll, Dennis (2018):
Transfer-free mass-fabrication of graphene field-effect gas sensors.
Perth, Australia, In: AN-EM 2018 13th International Conference on Advanced Nano and Energy Materials, Perth, Australia, 12.-14.12.2018, [Konferenzveröffentlichung]

2017

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Prof. Schwalke, Udo (Urheber) (2017):
Field effect transistor arrangement.
[Norm, Patent, Standard]

Schwarz, Mike ; Calvet, Laurie E. ; Snyder, John P. ; Krauss, Tillmann ; Schwalke, Udo ; Kloes, Alexander (2017):
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, S. 1-8, 99, [Online-Edition: https://doi.org/10.1109/TED.2017.2726899],
[Article]

Noll, Dennis ; Schwalke, Udo (2017):
Feasibility Study of in-situ Grown Nanocrystalline Graphene for Humidity Sensing.
Palma de Mallorca, Spain, In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Palma de Mallorca, Spain, 04.-06.04.2017, [Online-Edition: https://doi.org/10.1109/DTIS.2017.7930160],
[Konferenzveröffentlichung]

Noll, Dennis ; Schwalke, Udo (2017):
Evaluation of Metal Catalysts for Growth of Nanocrystalline Graphene for Gas Sensing.
In: E-MRS 2017 Spring Meeting, Strasbourg, France, 22.-26.05.2017, [Online-Edition: http://www.european-mrs.com/meetings/2017-spring-meeting],
[Konferenzveröffentlichung]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2017):
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: https://doi.org/10.1109/DTIS.2017.7930155],
[Article]

2016

Schwalke, Udo ; Baumgart, Helmut ; Hahn, Horst ; Kreupl, Franz ; Lemme, Max Christian ; Li, Qiliang ; Orlowski, Marius K. ; Rotkin, Slava V. (Hrsg.) (2016):
Emerging Nanomaterials and Devices.
Honolulu, Hawaii, USA, ECS Transactions (Volume 75, Issue 13), [Online-Edition: http://ecst.ecsdl.org/content/75/13],
[Zeitschriftenheft, -band oder -jahrgang]

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Konferenzveröffentlichung]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Konferenzveröffentlichung]

Noll, Dennis ; Schwalke, Udo (2016):
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Konferenzveröffentlichung]

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, S. 65-71, 75, (13), [Article]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, S. 57-63, 75, (13), [Article]

Noll, Dennis ; Schwalke, Udo (2016):
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
In: ECS Transactions, S. 11-16, 75, (13), [Article]

Wessely, Pia Juliane ; Schwalke, Udo
Aliofkhazraei, Mahmood ; Ali, Nasar ; Milne, William I. ; Ozkan, Cengiz S. ; Mitura, Stanislaw ; Gervasoni, Juana L. (Hrsg.) (2016):
Graphene Transistors: Silicon CMOS-Compatible Processing for Applications in Nanoelectronics.
In: Graphene Science Handbook: Size-Dependent Properties, CRC Press, [Online-Edition: https://www.crcpress.com/Graphene-Science-Handbook-Size-Depe...],
[Book section]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016):
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
In: International Conference on Micro & Nano Electronic Systems, Leipzig, Germany, 21.-24.03.2016, [Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473724],
[Konferenzveröffentlichung]

Noll, Dennis ; Schwalke, Udo (2016):
PMMA-enhancement of The Lateral Growth of Transfer-free In Situ CCVD Grown Graphene.
Leipzig, Germany, In: 13th International Multi-Conference on Systems, Signals & Devices (SSD), 21.-24.03.2016, [Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473696],
[Konferenzveröffentlichung]

Noll, Dennis ; Schwalke, Udo (2016):
Investigation of Transfer-free Catalytic CVD Graphene on SiO2 by Means of Conductive Atomic Force Microscopy.
Istanbul, Turkey, In: 11th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Istanbul, Turkey, 12.-14.04.2016, DOI: 10.1109/DTIS.2016.7483899,
[Online-Edition: https://ieeexplore.ieee.org/document/7483899],
[Konferenzveröffentlichung]

2015

Schwalke, Udo (2015):
Computation Beyond Moore's Law: Adaptive Field-Effect Devices for Reconfigurable Logic and Hardware-Based Neural Networks.
In: International Conference on Computing Communication and Security 2015, [Online-Edition: http://dx.doi.org/10.1109/CCCS.2015.7374177],
[Article]

Keyn, Martin ; Schwalke, Udo (2015):
Formation Process of Nickel Nano-clusters for Catalytic Growth of Carbon Nanotubes for Use in Field-Effect Transistors.
In: ECS Transactions, S. 1-11, 64, (38), [Online-Edition: http://dx.doi.org/10.1149/06438.0001ecst],
[Article]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2015):
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, S. Q46-Q50, 4, (5), [Online-Edition: http://dx.doi.org/10.1149/2.0021507jss],
[Article]

Noll, Dennis ; Schwalke, Udo (2015):
Silicon CMOS Compatible In-situ CCVD Growth of Graphene on Silicon Nitride.
Naples, Italy, In: 10th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Naples, Italy, 21.-23.04.2015, DOI: 10.1109/DTIS.2015.7127387,
[Konferenzveröffentlichung]

2014

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
Feldeffekttransistor-Anordnung.
[Online-Edition: https://depatisnet.dpma.de/DepatisNet/depatisnet?action=bibd...],
[Norm, Patent, Standard]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
Field Effect Transistor Arrangement.
[Online-Edition: https://patentscope.wipo.int/search/en/detail.jsf?docId=WO20...],
[Norm, Patent, Standard]

Keyn, Martin ; Schwalke, Udo (2014):
Highly Parallelized Carbon Nanotubes for Field-effect Device Applications.
In: 226th Meeting of the Electrochemical Society (ECS), Cancún, Mexico, 05.-10.10.2014, [Online-Edition: https://www.electrochem.org/meetings/biannual/226/],
[Konferenzveröffentlichung]

Schwalke, Udo ; Wessely, Pia Juliane (2014):
Improved Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 226th Meeting of the Electrochemical Society (ECS), Cancún, Mexico, 05.-10.10.2014, [Online-Edition: https://www.electrochem.org/meetings/biannual/226/],
[Konferenzveröffentlichung]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, S. 11-24, 64, (12), [Online-Edition: http://dx.doi.org/10.1149/06412.0011ecst ],
[Article]

Sivieri, Victor de Bodt ; Wessely, Pia Juliane ; Schwalke, Udo ; Agopian, Paula G. D. ; Martino, João A. (2014):
Graphene for Advanced Devices Applications.
In: SBMicro 2014 - 29th Symposium on Microeletronics Technology and Devices, Aracaju, Sergipe, Brazil, 01.-05.09.2014, [Online-Edition: http://www.chip-in-aracaju.ufs.br/sbmicro.php],
[Konferenzveröffentlichung]

Keyn, Martin ; Kramer, Andreas ; Schwalke, Udo (2014):
Dependence of Annealing Temperature on Cluster Formation during In Situ Growth of CNTs.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850652],
[Article]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850650],
[Article]

Wessely, Pia Juliane ; Schwalke, Udo (2014):
2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850651],
[Article]

Wessely, Pia Juliane ; Schwalke, Udo (2014):
In-Situ CCVD Grown Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: Applied Surface Science, S. 83-86, 291, [Online-Edition: http://dx.doi.org/10.1016/j.apsusc.2013.09.142],
[Article]

2013

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013):
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
In: 8th International Design and Test Symposium (IDT), Marrakesh, Morocco, 16.-18.12.2013, [Online-Edition: http://idtsymposium.org/],
[Konferenzveröffentlichung]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2013):
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, S. 1072-1076, 44, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mejo.2012.08.004],
[Article]

Schwalke, Udo (2013):
The Future of Nanoelectronics is Black: From Silicon to Hexagonal Carbon.
In: Africon 2013, Mauritius, 09.-12.09.2013, [Online-Edition: http://africon2013.org/],
[Konferenzveröffentlichung]

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Prof. Schwalke, Udo (Urheber) (2013):
Feldeffekttransistor-Anordnung.
[Norm, Patent, Standard]

Wessely, Pia Juliane ; Schwalke, Udo (2013):
Graphene Transistors: Silicon CMOS Compatible Processing for Applications in Nanoelectronics.
In: E-MRS 2013 Spring Meeting, Strasbourg, France, 27.-30.05.2012, [Online-Edition: http://www.emrs-strasbourg.com/index.php?option=com_content&...],
[Konferenzveröffentlichung]

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013):
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, S. 105-114, 53, (5), [Online-Edition: http://dx.doi.org/10.1149/05305.0105ecst],
[Article]

Wessely, Pia Juliane ; Schwalke, Udo (2013):
Transfer-free Bilayer Graphene FETs: Application as Memory Devices.
In: ECS Transactions, S. 133-137, 53, (1), [Online-Edition: http://dx.doi.org/10.1149/05301.0131ecst],
[Article]

Wessely, Pia Juliane (2013):
Graphen-Transistoren: Silizium CMOS kompatible Herstellung für Anwendungen in der Nanoelektronik.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt, [Online-Edition: http://tuprints.ulb.tu-darmstadt.de/3435],
[PhD thesis]

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013):
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, S. Q88-Q93, 2, (6), [Online-Edition: http://dx.doi.org/10.1149/2.002307jss],
[Article]

Keyn, Martin ; Schwalke, Udo (2013):
Multi-CNTFETs for Power Device Applications: Investigation of CCVD Grown CNTs by Means of Atomic Force Microscopy.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2013.6527767],
[Article]

Wessely, Pia Juliane ; Schwalke, Udo (2013):
Transfer-Free Grown Bilayer Graphene Memory Devices.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2013.6527769],
[Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2013):
Transfer-free grown bilayer graphene transistors for digital applications.
In: Solid-State Electronics, S. 86-90, 81, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.12.008],
[Article]

2012

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, S. 258-265, 77, [Online-Edition: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258],
[Article]

Keyn, Martin ; Wessely, Frank ; Schwalke, Udo (2012):
Large-scale Parallelization of In Situ CCVD Grown Carbon Nanotubes for Power Devices.
In: Junior Euromat 2012, Lausanne, Switzerland, 23.-27.07.2012, [Online-Edition: http://www.dgm.de/tagungen/?tgnr=1178&edate=27.07.2012&lg=en...],
[Konferenzveröffentlichung]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
In: Graphene Week 2012, Delft, Netherlands, 04.-08.06.2012, [Online-Edition: http://www.graphene-week.eu/],
[Konferenzveröffentlichung]

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo (2012):
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), S. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232952],
[Article]

Schwalke, Udo (2012):
Nanoelectronics: From Silicon to Carbon.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Gammarth, Tunisia, 16.-18.05.2012, [Online-Edition: http://www.dtis-conference.net/Technical_Program.pdf],
[Konferenzveröffentlichung]

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine (2012):
Nanoelectronics: From Silicon to Graphene.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232951],
[Article]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012):
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), S. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232949],
[Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232950],
[Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
In: 221th Meeting of the Electrochemical Society, Seattle, WA, USA, 06.-11.05.2012, [Online-Edition: http://link.aip.org/link/?ECA/1201/755],
[Konferenzveröffentlichung]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, S. 23-30, 45, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3700449],
[Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo ; Riedinger, Bernadette (2012):
Transfer-free Fabrication of Graphene Transistors.
In: Journal of Vacuum Science & Technology B, S. 03D114-1, 30, (3), [Online-Edition: http://dx.doi.org/10.1116/1.4711128],
[Article]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012):
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, S. 91-96, 74, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.04.017],
[Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Graphene 2012, Brussels, Belgium, 10.-13.04.2012, [Online-Edition: http://www.phantomsnet.net/Graphene_Conf/2012/Abstracts/2012...],
[Konferenzveröffentlichung]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012):
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
In: Spring Meeting & Exhibit 2012 of the Materials Research Society, San Francisco, CA, USA, 09.-13.04.2012, [Online-Edition: http://www.mrs.org/s12-program-ee/#tab4],
[Konferenzveröffentlichung]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012):
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, S. 33-38, 70, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2011.11.011],
[Article]

Stefanov, Yordan (2012):
The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt, [Online-Edition: urn:nbn:de:tuda-tuprints-29314],
[PhD thesis]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Hysteresis of In Situ CCVD Grown Graphene Transistors.
In: Electrochemical and Solid-State Letters, S. K31-K34, 15, (4), [Online-Edition: http://dx.doi.org/10.1149/2.019204esl],
[Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012):
In Situ CCVD Grown Bilayer Graphene Transistor.
In: ECS Transactions, S. 1-5, 41, (40), [Online-Edition: http://dx.doi.org/10.1149/1.3703508],
[Article]

2011

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo (2011):
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, S. 1132-1135, 44, (7-8), [Online-Edition: http://dx.doi.org/10.1016/j.physe.2011.12.022],
[Article]

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011):
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, S. 3393-3398, 88, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2010.05.013],
[Article]

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Keyn, Martin ; Rispal, Lorraine (2011):
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
In: 12th Trends in Nanotechnology International Conference (TNT), Tenerife, Canary Islands, Spain, 21.-25.11.2011, [Online-Edition: http://www.tntconf.org/2011/abstracts_TNT2011/TNT2011_Schwal...],
[Konferenzveröffentlichung]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011):
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC), S. 263-266, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2011.6044184],
[Article]

Wessely, Frank (2011):
CMOS ohne Dotierstoffe: Neuartige siliziumbasierte Nanodraht-Feldeffekt-Bauelemente.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt, [Online-Edition: urn:nbn:de:tuda-tuprints-26612],
[PhD thesis]

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011):
Production of Graphene Layers by Means of CVD for Field Effect Device Fabrication.
In: ImageNano, Bilbao, Spanien, 11.-14.04.2011, [Online-Edition: http://www.imaginenano.com/],
[Konferenzveröffentlichung]

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011):
CVD Assisted Fabrication of Graphene Layers for Field Effect Device Fabrication.
In: 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2011.5941438],
[Article]

Endres, Ralf (2011):
Gate-Last-Prozessintegration und elektrische Bewertung von High-k-Dielektrika und Metall-Elektroden in MOS-Bauelementen.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik, [Online-Edition: urn:nbn:de:tuda-tuprints-25017],
[PhD thesis]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011):
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI), S. 41-42, [Article]

2010

Schwalke, Udo ; Rispal, Lorraine (2010):
Non-Volatile Memory Effect in Carbon Nanotube Field-Effect Transistors: Charge Trapping in AlxOy High-k Dielectrics Made from Sacrificial Metal Catalyst.
In: 41st IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 02.-04.12.2010, [Konferenzveröffentlichung]

Endres, Ralf ; Gottlob, H. D. B. ; Schmidt, M. ; Schwendt, D. ; Osten, H. J. ; Schwalke, Udo (2010):
Crystalline Gadolinium Oxide: A Promising High-K Candidate for Future CMOS Generations.
In: ECS Transactions, S. 25-29, 33, (3), [Online-Edition: http://dx.doi.org/10.1149/1.3481588],
[Article]

Rispal, Lorraine ; Ginsel, Pia Juliane ; Schwalke, Udo (2010):
In Situ Growth of Carbon for Nanoelectronics: From Nanotubes to Graphene.
In: ECS Transactions, S. 13-19, 33, (9), [Online-Edition: http://dx.doi.org/10.1149/1.3493679],
[Article]

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010):
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, S. 169-173, 33, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3483505],
[Article]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2010):
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC), S. 356-358, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2010.5617754],
[Article]

Schwalke, Udo (2010):
Kohlenstoff: Die Zukunft der Nanoelektronik?
In: Inno.CNT-Jahreskongress, Marl, Deutschland, 20.01.2010, [Konferenzveröffentlichung]

Endres, Ralf ; Schwalke, Udo (2010):
Prozessintegration und elektrische Charakterisierung von kristallinen Gd2O3 High-k Dielektrika.
In: VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability, Erfurt, Deutschland, 17.-18.05.2010, [Konferenzveröffentlichung]

Schwalke, Udo (2010):
Nanoscale Electrical Characterization at the Wafer Level: Defects in High-k Dielectrics.
In: VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability, Erfurt, Deutschland, 17.-18.05.2010, [Konferenzveröffentlichung]

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010):
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), S. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2010.5487572],
[Article]

Schwalke, Udo (2010):
Kohlenstoff: Die Zukunft der Nanoelektronik?
In: ZVEI-Fachgruppensitzung "Halbleiter Bauelemente", Hanau, Deutschland, 24.02.2010, [Konferenzveröffentlichung]

2009

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009):
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
In: 40th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 03.-05.12.2009, [Konferenzveröffentlichung]

Schwalke, Udo (2009):
Kohlenstoff-Nanoröhren als elektronische Bauteile für biomedizinische Sensor-Anwendungen.
In: 6. Nanotechnologieforum Hessen, Hanau, Deutschland, 26.11.2009, [Konferenzveröffentlichung]

Zaunert, Florian (2009):
Simulation und vergleichende elektrische Bewertung von planaren und 3D-MOS-Strukturen mit high-k Gate-Dielektrika.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik, [Online-Edition: urn:nbn:de:tuda-tuprints-19784],
[PhD thesis]

Rispal, Lorraine (2009):
Large Scale Fabrication of Field-Effect Devices based on In Situ Grown Carbon Nanotubes.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik, [Online-Edition: urn:nbn:de:tuda-tuprints-20210],
[PhD thesis]

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009):
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414209],
[Article]

Rispal, Lorraine ; Schwalke, Udo (2009):
Carbon: The Future of Nanoelectronics.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414197],
[Article]

Wessely, Frank ; Endres, Ralf ; Schwalke, Udo (2009):
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414217],
[Article]

Rispal, Lorraine ; Schwalke, Udo (2009):
Carbon Nanotube Memory Devices: Mass-Fabrication and Electrical Characterization.
In: 216th Meeting of The Electrochemical Society (ECS), Wien, Österreich, 04.-09.10.2009, [Online-Edition: http://ecsdl.org/getpdf/servlet/GetPDFServlet?filetype=pdf&i...],
[Konferenzveröffentlichung]

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2009):
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, S. 258-261, 27, (1), [Online-Edition: http://dx.doi.org/10.1116/1.3054350],
[Article]

Schwalke, Udo (2009):
Nano-Electronics: From Top-Down to Bottom-Up?!
In: 8th Symposium Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era, Warschau, Polen, 22.-24.06.2009, [Konferenzveröffentlichung]

Schwalke, Udo (2009):
Yield, Reliability and Variability in the Nano-Era: Will Existing Approaches Survive?
In: 14th IEEE European Test Symposium, Sevilla, Spanien, 25.-29.05.2009, [Konferenzveröffentlichung]

Schwalke, Udo (2009):
Damscene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
In: DGM Arbeitskreis "Materialien für elektronische Anwendungen", 20.02.2009, Berlin, Deutschland, [Konferenzveröffentlichung]

2008

Endres, Ralf ; Wessely, Frank ; Schwalke, Udo (2008):
CMP-based Gate Last High-K Integration.
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), S. 544-547, [Online-Edition: http://www.stw.nl/NR/rdonlyres/678497B6-D48F-4F76-94AF-EB589...],
[Article]

Schwalke, Udo (2008):
Nanotechnology: The Power of Small.
In: 2nd International Conference on Signals, Circuits & Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2008.4746860],
[Article]

Rispal, Lorraine ; Schwalke, Udo (2008):
Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio.
In: IEEE Electron Device Letters, S. 1349-1352, 29, (12), [Online-Edition: http://dx.doi.org/10.1109/LED.2008.2005850],
[Article]

Schwalke, Udo ; Rispal, Lorraine (2008):
Mass-Fabrication of Voltage-Programmable Non-Volatile Carbon Nanotube Memory Devices.
In: 214th Meeting of The Electrochemical Society (ECS), Honolulu, HI, USA, 12.-17.10.2008, [Online-Edition: http://ecsdl.org/getpdf/servlet/GetPDFServlet?filetype=pdf&i...],
[Konferenzveröffentlichung]

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2008):
CMOS Integration of Epitaxial Gd2O3.
In: 15th Workshop on Dielectrics in Microelectronics (WoDiM), 23.-25.06.2008, Bad Saarow, Deutschland, [Konferenzveröffentlichung]

Schwalke, Udo (2008):
Field-Effect Controlled Single-Walled Carbon Nanotube Devices for Biomedical Sensor Applications.
In: 3rd International Conference on Smart Materials, Structures & Systems (CIMTEC), Acireale, Italien, 08.-13.06.2008, [Konferenzveröffentlichung]

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo (2008):
Mass-Production of Passivated CNTFETs: Statistics and Gate-Field Dependence of Hysteresis Effect.
In: ECS Transactions, S. 65-71, 13, (14), [Online-Edition: http://dx.doi.org/10.1149/1.2998532],
[Article]

Schwalke, Udo ; Rispal, Lorraine (2008):
Fabrication of Ultra-Sensitive Carbon Nanotube Field-Effect Sensors (CNTFES) for Biomedical Applications.
In: ECS Transactions, S. 39-45, 13, (22), [Online-Edition: http://dx.doi.org/10.1149/1.3005401],
[Article]

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2008):
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, S. 15-19, 85, (1), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2007.03.008],
[Article]

Rispal, Lorraine ; Schwalke, Udo (2008):
Structural and Electrical Characterization of Carbon Nanotube Field-Effect Transistors Fabricated by Novel Self-aligned Growth Method.
In: 3rd International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2008.4540244],
[Article]

Wirbeleit, F. ; Pedrero, V. ; Thron, D. ; Stephan, R. ; Schwalke, Udo (2008):
Optical Detection of SiN Stress Layer Induced Carrier Mobility Enhancement in Silicon.
In: Material Research Society (MRS), San Francisco, CA, USA, 24.-28.03.2008, [Konferenzveröffentlichung]

Endres, Ralf ; Schwalke, Udo (2008):
Damascene Metal Gate Technology for Damage-Free High-k Process Integration.
In: Proceedings of the 7th International Semiconductor Technology Conference (ISTC), S. 486-492, [Article]

Schwalke, Udo (2008):
Damascene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
In: DPG Spring Meeting, Berlin, Deutschland, 25.-29.02.2008, [Konferenzveröffentlichung]

Schwalke, Udo (2008):
Novel Field-Effect Controlled Single-Walled Carbon Nanotube Network Devices for Biomediccal Sensor Applications.
In: Conference Proceedings of Biodevices 2008, [Article]

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo (2008):
Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-aligned Process and Influence on Device Transfer Characteristic Hysteresis.
In: Japanese Journal of Applied Physics, S. 3287-3291, 47, (4), [Online-Edition: http://dx.doi.org/10.1143/JJAP.47.3287],
[Article]

2007

Zaunert, Florian ; Endres, Ralf ; Schwalke, Udo (2007):
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007, S. 488-491, [Online-Edition: http://www.stw.nl/NR/rdonlyres/298C269E-5F75-46AC-875E-ACF93...],
[Article]

Endres, Ralf ; Schwalke, Udo (2007):
Damascene Metal Gate Technology: A Front-End CMP Based Universal Platform for High-k Evaluation at the Device Level.
In: Proceedings of the International Conference on Planarization Technology 2007 (ICPT), S. 421-426, [Online-Edition: http://elib1.ulb.tu-darmstadt.de/ieee/search/srchabstract.js...],
[Article]

Stefanov, Yordan ; Schwalke, Udo
Li, Yuzhuo (Hrsg.) (2007):
Shallow Trench Isolation Chemical Mechanical Planarization.
In: Microelectronic Applications of Chemical Mechanical Planarization, Hoboken, NJ, USA, Wiley, [Book section]

Hurley, P. K. ; Pijolat, M. ; Cherkaoui, K. ; O'Connor, E. ; O'Connell, D. ; Negara, M. A. ; Lemme, M. C. ; Gottlob, D. B. ; Schmidt, M. ; Stegmaier, K. ; Schwalke, Udo ; Hall, S. ; Buiu, O. ; Engstrom, O. ; Newcomb, S. B. (2007):
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
In: ECS Transactions, S. 145-156, 11, (4), [Online-Edition: http://dx.doi.org/10.1149/1.2779556],
[Article]

Rispal, Lorraine ; Hang, H. ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2007):
Self-Aligned Fabrication Process Based on Sacrificial Catalyst for Pd-Contacted Carbon Nanotube Field-Effect Transistors.
In: ECS Transactions, S. 53-61, 11, (8), [Online-Edition: http://dx.doi.org/10.1149/1.2783302],
[Article]

Schwalke, Udo (2007):
Application of Scanning Probe Microscopy Techniques for Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices.
In: ECS Transactions, S. 301-315, 11, (3), [Online-Edition: http://dx.doi.org/10.1149/1.2778673],
[Article]

Wessely, Frank ; Rispal, Lorraine ; Schwalke, Udo (2007):
Mix-and-Match Lithography Based Ultrathin-body SOI Nanowires and Schottky-S/D-FETs.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE), S. 478-481, [Online-Edition: http://www.stw.nl/NR/rdonlyres/ADD2FB2C-3AD4-4D1E-BA0A-1EAEA...],
[Article]

Biethan, Jens-Peter ; Kammler, Thorsten ; Naumann, Andreas ; Schwalke, Udo ; Stephan, Rolf ; Trui, Bernhard (2007):
New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon.
In: Book of Abstracts: E-MRS Fall Meeting 2007, S. 214-215, [Article]

Rispal, Lorraine ; Yang, Hongyu ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2007):
Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors.
In: 2007 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 18.-21.09.2007, [Konferenzveröffentlichung]

Schwalke, Udo (2007):
Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices by Means of Scanning Probe Microscopy.
In: ECS Transactions, S. 129-140, 10, (1), [Online-Edition: http://dx.doi.org/10.1149/1.2773983],
[Article]

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007):
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
In: European Congress on Advanced Materials and Processes (EUROMAT), Nürnberg, Deutschland, 10.-13.09.2007, [Konferenzveröffentlichung]

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007):
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
In: European Congress on Advanced Materials and Processes (EUROMAT), Nürnberg, Deutschland, 10.-13.09.2007, [Konferenzveröffentlichung]

Endres, Ralf ; Schwalke, Udo (2007):
Damascene Metal Gate Technology: A Novel Approach towards Nano CMOS Devices with Crystalline High-K Gate Dielectrics.
In: Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Konferenzveröffentlichung]

Rispal, Lorraine ; Schwalke, Udo (2007):
Fabrication-Process for CNTFETs Based on Sacrificial Catalyst: Device Characterization and Conductive-AFM Measurements.
In: Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Konferenzveröffentlichung]

Schwalke, Udo (2007):
Nanoelectronics: From Top-Down to Bottom-Up.
In: Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Konferenzveröffentlichung]

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007):
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, S. 528-531, 47, (4-5), [Online-Edition: http://dx.doi.org/10.1016/j.microrel.2007.01.018],
[Article]

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007):
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, S. 78-85, 2, [Online-Edition: http://www.nit.eu/czasopisma/JTIT/2007/2/78.pdf],
[Article]

2006

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006):
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
In: 37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 07.-09.12.2006, [Konferenzveröffentlichung]

Schwalke, Udo (2006):
Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K.
In: Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), [Article]

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006):
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, S. 297-301, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356289],
[Article]

Rispal, Lorraine ; Ruland, Tino ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006):
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, S. 441-448, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356303],
[Article]

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2006):
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
In: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX, USA, 27.-29.09.2006, [Konferenzveröffentlichung]

Gottlob, H. D. B. ; Echtermeyer, T. ; Mollenhauer, T. ; Schmidt, M. ; Efavi, J. ; Wahlbrink, T. ; Lemme, L. M. ; Kurz, H. ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H. J. (2006):
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC), S. 150-153, [Online-Edition: http://dx.doi.org/10.1109/ESSDER.2006.307660],
[Article]

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006):
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics, [Article]

Komaragiri, Rama Subrahmanyam (2006):
A Simulation Study on the Performance Improvement of CMOS Devices Using Alternative Gate Electrode Structures.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik, [Online-Edition: urn:nbn:de:tuda-tuprints-8257],
[PhD thesis]

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006):
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
In: 7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era, Warschau, Polen, 25.-28.06.2006, [Konferenzveröffentlichung]

Rispal, Lorraine ; Wessely, Frank ; Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2006):
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
In: IEEE EDS Workshop on Advanced Electron Devices, Fraunhofer-Institut IMS, Duisburg, Deutschland, 13.-14.06.2006, [Konferenzveröffentlichung]

Barreiro, A. ; Selbmann, D. ; Pichler, T. ; Biedermann, K. ; Gemming, T. ; Rümmeli, M. H. ; Schwalke, Udo ; Büchner, B. (2006):
On the Effects of Solution and Reaction Parameters for the Aerosol-assisted CVD Growth of Long Carbon Nanotubes.
In: Applied Physics A, S. 719-725, 82, (4), [Online-Edition: http://dx.doi.org/10.1007/s00339-005-3436-5],
[Article]

Marathe, Vaibhav G. ; Stefanov, Yordan ; Schwalke, Udo ; DasGupta, Nandita (2006):
Study of Pinholes in Ultrathin SiO2 by C-AFM Technique.
In: Thin Solid Films, S. 11-14, 504, (1-2), [Online-Edition: http://dx.doi.org/10.1016/j.tsf.2005.09.019],
[Article]

Rispal, Lorraine ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006):
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
In: Japanese Journal of Applied Physics, S. 3672-3679, 45, [Online-Edition: http://dx.doi.org/10.1143/JJAP.45.3672],
[Article]

2005

Stefanov, Yordan ; Cilek, F. ; Endres, Ralf ; Schwalke, Udo (2005):
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
In: The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP), Seoul, Korea, 17.-19.11.2005, [Konferenzveröffentlichung]

Stefanov, Yordan ; Singh, Ravneet ; DasGupta, Nandita ; Misra, Pankaj ; Schwalke, Udo (2005):
Conductive Atomic Force Microscopy Study of Leakage Currents Through Microscopic Structural Defects in High-K Gate Dielectrics.
In: Proceedings of The Electrochemical Society Conference "Crystalline Defects and Contamination" (ECS-DECON), [Article]

Rispal, Lorraine ; Stefanov, Yordan ; Heller, Rudolf ; Tzschöckel, Gerhard ; Hess, Gisela ; Haberle, Klaus ; Schwalke, Udo (2005):
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
In: International Conference on Solid State Devices and Materials (SSDM), Kobe, Japan, 12.-15.09.2005, [Konferenzveröffentlichung]

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005):
Application of Porous Silicon 2D Photonic Crystals as On-chip Interconnects.
In: European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Konferenzveröffentlichung]

Rispal, Lorraine ; Schwalke, Udo (2005):
Carbon Nanotube Devices Integrated in the CMOS Process Using Chemical Vapour Deposition.
In: European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Konferenzveröffentlichung]

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005):
Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs with Conductive Atomic Force Microscopy.
In: European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Konferenzveröffentlichung]

Rispal, Lorraine ; Stefanov, Yordan ; Schwalke, Udo (2005):
Atomic Force Microscopy (AFM) and Electrical Characterization of Carbon Nanotube (CNT) Devices Fabricated by Chemical Vapour Deposition.
In: Nanoscale III, Santa Barbara, CA, USA, 13.-16.08.2005, [Konferenzveröffentlichung]

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, S. 1885-1889, 351, (21-23), [Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032],
[Article]

Stefanov, Yordan ; Komaragiri, Rama ; Schwalke, Udo (2005):
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD), S. 167, [Article]

Schwalke, Udo (2005):
Gate Dielectrics: Process Integration Issues and Electrical Properties.
In: Journal of Telecommunications and Technology, S. 7, 1, [Article]

Schwalke, Udo ; Stefanov, Yordan (2005):
Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics.
In: Microelectronics Reliability, S. 790-793, 45, (5-6), [Online-Edition: http://dx.doi.org/10.1016/j.microrel.2004.11.047],
[Article]

2004

Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2004):
Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization.
In: Proceedings of the MRS Fall Meeting 2004, [Article]

Komaragiri, Rama Subrahmanyam ; Zaunert, Florian ; Schwalke, Udo (2004):
Gate Engineering for High-K Dielectric and Ultra-thin Gate Oxide CMOS.
In: 11th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Niederlande, 24.-25.11.2004, [Konferenzveröffentlichung]

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Schwalke, Udo (2004):
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices, [Article]

Ruland, Tino ; Stefanov, Yordan ; Rispal, Lorraine ; Schwalke, Udo (2004):
Application of Atomic Force Microscopy in Resist Structure Evaluation.
In: VDI/VDE-Gesellschaft Mess- und Automatisierungstechnik, (1860), [Article]

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Schwalke, Udo (2004):
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts, S. 97, [Article]

Stefanov, Yordan ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2004):
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST), [Article]

Schwalke, Udo ; Stefanov, Yordan (2004):
Process Integration and Electrical Characterization of Crystalline High-K Gate Dielectrics.
Elsevier, In: 13th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Irland, 28.-30.06.2004, [Konferenzveröffentlichung]

Kerber, Andreas (2004):
Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik, [Online-Edition: urn:nbn:de:tuda-tuprints-4044],
[PhD thesis]

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2004):
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Microelectronic Engineering, S. 267-272, 72, (1-4), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2004.01.002],
[Article]

Nordmann, Alfred ; Schwalke, Udo (2004):
Die technische und gesellschaftliche Einbettung der Nanotechnik.
In: Thema Forschung, S. 44-50, 2, ISSN 1434-7768,
[Article]

2003

Kerber, Andreas ; Cartier, E. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, S. 6627-6630, 94, (10), [Online-Edition: http://dx.doi.org/10.1063/1.1621718],
[Article]

Schwalke, Udo ; Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino (2003):
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC), S. 243-246, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2003.1256859],
[Article]

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: IEEE Transactions on Electron Devices, S. 1261-1269, 50, (5), [Online-Edition: http://dx.doi.org/10.1109/TED.2003.813486],
[Article]

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS), S. 41-45, [Online-Edition: http://dx.doi.org/10.1109/RELPHY.2003.1197718],
[Article]

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kauerauf, T. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics.
In: IEEE Dlectron Device Letters, S. 87-89, 24, (2), [Online-Edition: http://dx.doi.org/10.1109/LED.2003.808844],
[Article]

Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino (2003):
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD), [Article]

Schwalke, Udo (2003):
Towards Nano-CMOS Technology: Trends and Challenges.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD), S. 439-443, [Article]

2002

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2002):
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
In: IEEE Semiconductor Interface Specialist Conference, San Diego, CA, USA, 05.-07.12.2002, [Konferenzveröffentlichung]

Schwalke, Udo ; Boye, K. ; Haberle, Klaus ; Heller, Rudolf ; Hess, Gisela ; Müller, Gudrun ; Ruland, Tino ; Tzschöckel, Gerhard ; Osten, H. J. ; Fissel, A. ; Müssig, H.-J. (2002):
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC), S. 407-410, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2002.194954],
[Article]

2001

Schwalke, Udo (2001):
Progress in Device Isolation Technology.
In: Microelectronis Reliability, S. 483-490, 41, (4), [Online-Edition: http://dx.doi.org/10.1016/S0026-2714(00)00259-6],
[Article]

Schwalke, Udo ; Pölzl, Martin ; Sekinger, Thomas ; Kerber, Martin (2001):
Ultra-Thick Gate Oxides: Charge Generation and Its Iimpact on Reliability.
In: Microelectronics Reliability, S. 1007-1010, 41, (7), [Online-Edition: http://dx.doi.org/10.1016/S0026-2714(01)00058-0],
[Article]

This list was generated on Fri Aug 23 01:53:58 2019 CEST.