Tillmann Krauss

Profilbild Krauss

Dipl.-Wirt.-Ing. Tillmann Krauss

Links

Forschungsschwerpunkt

  • Elektrostatische Dotierung von Silizium

Sonstige Aufgabengebiete

  • co-Betreuung der Vorlesung „Halbleiterbauelemente – Grundlagen“
  • Koordination der Übungen zu „Halbleiterbauelemente – Grundlagen“
  • Betreuung des IHTN-Webauftritts

Publikationen

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Gruppiere nach: Publikationsjahr | Typ des Eintrags | Keine Gruppierung
Springe zu: 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009
Anzahl der Einträge: 30.

2018

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2018):
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
In: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), S. 1-4,
Taormina, Sizilien, 9-12 April 2018, DOI: 10.1109/DTIS.2018.8368567,
[Konferenzveröffentlichung]

2017

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Prof. Schwalke, Udo (Urheber) (2017):
Field effect transistor arrangement.
[Norm, Patent, Standard]

Schwarz, Mike ; Calvet, Laurie E. ; Snyder, John P. ; Krauss, Tillmann ; Schwalke, Udo ; Kloes, Alexander (2017):
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, 99, S. 1-8. [Artikel]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2017):
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Buchkapitel]

2016

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Konferenzveröffentlichung]

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Konferenzveröffentlichung]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, 75 (13), S. 57-63. [Artikel]

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, 75 (13), S. 65-71. [Artikel]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016):
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
International Conference on Micro & Nano Electronic Systems, Leipzig, Germany, 21.-24.03.2016, [Konferenzveröffentlichung]

2015

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2015):
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, 4 (5), S. Q46-Q50. [Artikel]

2014

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
Field Effect Transistor Arrangement.
PCT/EP 2014/063459,
[Norm, Patent, Standard]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
Feldeffekttransistor-Anordnung.
DE 102013106729A1,
[Norm, Patent, Standard]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, 64 (12), S. 11-24. [Artikel]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Artikel]

2013

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013):
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
8th International Design and Test Symposium (IDT), Marrakesh, Morocco, 16.-18.12.2013, [Konferenzveröffentlichung]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2013):
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, 44 (12), S. 1072-1076. [Artikel]

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Prof. Schwalke, Udo (Urheber) (2013):
Feldeffekttransistor-Anordnung.
[Norm, Patent, Standard]

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013):
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, 53 (5), S. 105-114. [Artikel]

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013):
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, 2 (6), S. Q88-Q93. [Artikel]

2012

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012):
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), S. 1-3. [Artikel]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012):
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, 74, S. 91-96. [Artikel]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012):
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, 70, S. 33-38. [Artikel]

2011

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011):
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, 88 (12), S. 3393-3398. [Artikel]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011):
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC), S. 263-266. [Artikel]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011):
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI), S. 41-42. [Artikel]

2010

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010):
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, 33 (4), S. 169-173. [Artikel]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2010):
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC), S. 356-358. [Artikel]

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010):
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), S. 1-3. [Artikel]

2009

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009):
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
40th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 03.-05.12.2009, [Konferenzveröffentlichung]

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009):
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Artikel]

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