Pia Juliane Wessely

Profilbild P.J. Wessely

Dr.-Ing. M.Sc. Pia Juliane Wessely

+49 6151 16-20051
+49 6151 16-21514

Hochschulstraße 6
64289 Darmstadt

Raum: S2|07 110

Mehr Informationen

Derzeit tätig in der Vorlesungsassistenz der Festkörperphysik der TU Darmstadt.


Forschungsschwerpunkt am IHTN

  • Elektronische und optoelektronische Graphen-Bauelemente im Rahmen des Forschungsprojekts ELOGRAPH

Best Paper Award der DTIS 2013

Best Paper Award - DTIS 2013 - Verleihung

Der Beitrag von Pia Juliane Wessely zur IEEE-Fachtagung zum Thema „Design and Technology of Integrated Systems“ (DTIS) wurde mit dem Best Paper Award ausgezeichnet. Mehr…

Artikel im Dieburger Anzeiger und in der Offenbach-Post

Zeitung 2012 - P.J. Wessely 1

In den Ausgaben vom 3. März 2012 sind jeweils Artikel im Dieburger Anzeiger und in der Offenbach-Post über M.Sc. Wessely erschienen.

(Mit freundlicher Genehmigung von Jens Dörr, Journalist und Pressefotograf, www.jensdoerr.com)

Publikationen

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Gruppiere nach: Publikationsjahr | Typ des Eintrags | Keine Gruppierung
Springe zu: 2016 | 2014 | 2013 | 2012 | 2011
Anzahl der Einträge: 24.

2016

Wessely, Pia Juliane ; Schwalke, Udo
Aliofkhazraei, Mahmood ; Ali, Nasar ; Milne, William I. ; Ozkan, Cengiz S. ; Mitura, Stanislaw ; Gervasoni, Juana L. (Hrsg.) (2016):
Graphene Transistors: Silicon CMOS-Compatible Processing for Applications in Nanoelectronics.
In: Graphene Science Handbook: Size-Dependent Properties, CRC Press, [Online-Edition: https://www.crcpress.com/Graphene-Science-Handbook-Size-Depe...],
[Buchkapitel]

2014

Schwalke, Udo ; Wessely, Pia Juliane (2014):
Improved Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 226th Meeting of the Electrochemical Society (ECS), Cancún, Mexico, 05.-10.10.2014, [Online-Edition: https://www.electrochem.org/meetings/biannual/226/],
[Konferenzveröffentlichung]

Sivieri, Victor de Bodt ; Wessely, Pia Juliane ; Schwalke, Udo ; Agopian, Paula G. D. ; Martino, João A. (2014):
Graphene for Advanced Devices Applications.
In: SBMicro 2014 - 29th Symposium on Microeletronics Technology and Devices, Aracaju, Sergipe, Brazil, 01.-05.09.2014, [Online-Edition: http://www.chip-in-aracaju.ufs.br/sbmicro.php],
[Konferenzveröffentlichung]

Wessely, Pia Juliane ; Schwalke, Udo (2014):
2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850651],
[Artikel]

Wessely, Pia Juliane ; Schwalke, Udo (2014):
In-Situ CCVD Grown Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: Applied Surface Science, S. 83-86, 291, [Online-Edition: http://dx.doi.org/10.1016/j.apsusc.2013.09.142],
[Artikel]

2013

Wessely, Pia Juliane ; Schwalke, Udo (2013):
Graphene Transistors: Silicon CMOS Compatible Processing for Applications in Nanoelectronics.
In: E-MRS 2013 Spring Meeting, Strasbourg, France, 27.-30.05.2012, [Online-Edition: http://www.emrs-strasbourg.com/index.php?option=com_content&...],
[Konferenzveröffentlichung]

Wessely, Pia Juliane ; Schwalke, Udo (2013):
Transfer-free Bilayer Graphene FETs: Application as Memory Devices.
In: ECS Transactions, S. 133-137, 53, (1), [Online-Edition: http://dx.doi.org/10.1149/05301.0131ecst],
[Artikel]

Wessely, Pia Juliane (2013):
Graphen-Transistoren: Silizium CMOS kompatible Herstellung für Anwendungen in der Nanoelektronik.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt, [Online-Edition: http://tuprints.ulb.tu-darmstadt.de/3435],
[Dissertation]

Wessely, Pia Juliane ; Schwalke, Udo (2013):
Transfer-Free Grown Bilayer Graphene Memory Devices.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2013.6527769],
[Artikel]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2013):
Transfer-free grown bilayer graphene transistors for digital applications.
In: Solid-State Electronics, S. 86-90, 81, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.12.008],
[Artikel]

2012

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, S. 258-265, 77, [Online-Edition: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258],
[Artikel]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
In: Graphene Week 2012, Delft, Netherlands, 04.-08.06.2012, [Online-Edition: http://www.graphene-week.eu/],
[Konferenzveröffentlichung]

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo (2012):
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), S. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232952],
[Artikel]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232950],
[Artikel]

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine (2012):
Nanoelectronics: From Silicon to Graphene.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232951],
[Artikel]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
In: 221th Meeting of the Electrochemical Society, Seattle, WA, USA, 06.-11.05.2012, [Online-Edition: http://link.aip.org/link/?ECA/1201/755],
[Konferenzveröffentlichung]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, S. 23-30, 45, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3700449],
[Artikel]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo ; Riedinger, Bernadette (2012):
Transfer-free Fabrication of Graphene Transistors.
In: Journal of Vacuum Science & Technology B, S. 03D114-1, 30, (3), [Online-Edition: http://dx.doi.org/10.1116/1.4711128],
[Artikel]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012):
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
In: Spring Meeting & Exhibit 2012 of the Materials Research Society, San Francisco, CA, USA, 09.-13.04.2012, [Online-Edition: http://www.mrs.org/s12-program-ee/#tab4],
[Konferenzveröffentlichung]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Graphene 2012, Brussels, Belgium, 10.-13.04.2012, [Online-Edition: http://www.phantomsnet.net/Graphene_Conf/2012/Abstracts/2012...],
[Konferenzveröffentlichung]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Hysteresis of In Situ CCVD Grown Graphene Transistors.
In: Electrochemical and Solid-State Letters, S. K31-K34, 15, (4), [Online-Edition: http://dx.doi.org/10.1149/2.019204esl],
[Artikel]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012):
In Situ CCVD Grown Bilayer Graphene Transistor.
In: ECS Transactions, S. 1-5, 41, (40), [Online-Edition: http://dx.doi.org/10.1149/1.3703508],
[Artikel]

2011

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo (2011):
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, S. 1132-1135, 44, (7-8), [Online-Edition: http://dx.doi.org/10.1016/j.physe.2011.12.022],
[Artikel]

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Keyn, Martin ; Rispal, Lorraine (2011):
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
In: 12th Trends in Nanotechnology International Conference (TNT), Tenerife, Canary Islands, Spain, 21.-25.11.2011, [Online-Edition: http://www.tntconf.org/2011/abstracts_TNT2011/TNT2011_Schwal...],
[Konferenzveröffentlichung]

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