News-Archiv 2010

218th Meeting of the Electrochemical Society

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10.-15.10.2010, Las Vegas, NV, USA

R. Endres, H.D.B. Gottlob, M. Schmidt, D. Schwendt, H. Osten, U. Schwalke
Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations (Session E5)

L. Rispal, P. Ginsel, U. Schwalke
In Situ Growth of Carbon for Nanoelectronics: From Nanotubes to Graphene (Session E7)

F. Wessely, T. Krauss, R. Endres, U. Schwalke
Novel Application of Wafer-Bonded MultiSOI: Junctionless Nanowire (NW) Transistors for CMOS Logic (Session E11)

Abstract – In this paper, we report on the fabrication and characterization of voltage-programmable (VP) nanowire (NW) field-effect-transistor (FET) devices suitable to enhance the flexibility in circuit design, such as of reconfigurable logic. Silicon NW-structures with midgap Schottky S/D junctions on silicon-on-insulator (SOI) substrate were fabricated performing as unipolar CMOS-like transistors. The desired device type, i.e. NMOS or PMOS, is programmed by application of a certain back-gate voltage. The programming capabilities of the devices fabricated using this approach are demonstrated experimentally using a VP-NW-CMOS inverter circuit on a multi-SOI-substrate like set-up.

40th European Solid-State Device Research Conference

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13.-17.09.2010, Seville, Spain

F. Wessely, T. Krauss, U. Schwalke
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications

Abstract – In this paper, we report on the fabrication and characterization of a novel voltage-selectable (VS) nanowire (NW) CMOS technology suitable to extend the flexibility in circuit design and reconfigurable logic applications. Silicon NW structures with Schottky-S/D-junctions on silicon-on-insulator (SOI) substrate are used to realize dopant-independent unipolar CMOS-like transistors. A selection of the device type (PMOS or NMOS) is performed by application of an appropriate back-gate bias. The versatile programming capability of this approach is demonstrated in a VS-NW-CMOS inverter set-up.

Fachtagung der Informationstechnischen Gesellschaft im VDE

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Fachgruppe 8.5.6 – fWLR / Wafer Level Reliability – Zuverlässigkeits-Simulation & Qualifikation

17./18.05.2010, Erfurt, Germany

U. Schwalke
Nanoscale Electrical Characterization at the Wafer Level: Defects in High-k Dielectrics

R. Endres
Prozessintegration und elektrische Charakterisierung von kristallinen Gd2O3 High-k Dielektrika

F. Wessely
Junction-less Nanowire CMOS Technology on Multi-SOI Wafer

EuroSOI 2010

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6th International SemOI Conference „Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices“

26.-30.04.2010, Kyiv, Ukraine

U. Schwalke
Carbon: The Future of Silicon Nanoelectronics? (eingeladener Vortrag)

F. Wessely, T. Krauss, U. Schwalke
Double-Gate Voltage Programmable Silicon-Nanowire-FETs

Abstract – In this paper, we report on the fabrication and characterization of voltage-programmable (VP) nanowire (NW) field-effect-transistor (FET) devices suitable to broaden the flexibility in circuit design, i.e. of reconfigurable logic. Silicon NW-structures with mid-gap Schottky S/D junctions on siliconon-insulator (SOI) substrate were fabricated as unipolar CMOS transistors. The desired device type, i.e. NMOS or PMOS, is selected by applying a certain back-gate bias voltage. The programming capabilities of the devices fabricated using this approach are demonstrated experimentally using a VP-NWCMOS inverter circuit on a multi-SOI-substrate like set-up.

Design & Technology of Integrated Systems 2010

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23.-25.03.2010, Hammamet, Tunisia

F. Wessely, T. Krauss, R. Endres, U. Schwalke
Dopant Less Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate

Member of the Programm Committe: Prof. Dr. U. Schwalke

Zentralverband für Elektrotechnik- und Elektronikindustrie

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24.02.2010, Hanau, Germany

U. Schwalke
Kohlenstoff: Die Zukunft der Silizium-Nanoelektronik? (Gastredner)

Inno.CNT 2010

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Jahreskongress Innovationsallianz Carbon Nanotubes

20.01.2010, Marl, Germany

U. Schwalke
Kohlenstoff: Die Zukunft der Nanoelektronik? (eingeladener Vortrag)