Tillmann Krauss

Profilbild Krauss

Dipl.-Wirt.-Ing. Tillmann Krauss

+49 6151 16-23339
+49 6151 16-20675

Schloßgartenstraße 8
64289 Darmstadt

Raum: S2|17 231

Links

Forschungsschwerpunkt

  • Elektrostatische Dotierung von Silizium

Sonstige Aufgabengebiete

  • co-Betreuung der Vorlesung „Halbleiterbauelemente – Grundlagen“
  • Koordination der Übungen zu „Halbleiterbauelemente – Grundlagen“
  • Betreuung des IHTN-Webauftritts

Publikationen

Gruppiere nach: Datum | Typ des Eintrags | Keine Gruppierung
Springe zu: 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009
Anzahl der Einträge: 27.

2017

Schwarz, Mike ; Calvet, Laurie E. ; Snyder, John P. ; Krauss, Tillmann ; Schwalke, Udo ; Kloes, Alexander :
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
[Online-Edition: https://doi.org/10.1109/TED.2017.2726899]
In: IEEE Transactions on Electron Devices, 99 pp. 1-8.
[Artikel], (2017)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
[Online-Edition: https://doi.org/10.1109/DTIS.2017.7930155]
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2017)

2016

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
[Online-Edition: http://prime-intl.org/]
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), 02.-07.10.2016, Honolulu, Hawaii, USA.
[Konferenz- oder Workshop-Beitrag], (2016)

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo :
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
[Online-Edition: http://prime-intl.org/]
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), 02.-07.10.2016, Honolulu, Hawaii, USA.
[Konferenz- oder Workshop-Beitrag], (2016)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, 75 (13) pp. 57-63.
[Artikel], (2016)

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo :
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, 75 (13) pp. 65-71.
[Artikel], (2016)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
[Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473724]
In: International Conference on Micro & Nano Electronic Systems, 21.-24.03.2016, Leipzig, Germany.
[Konferenz- oder Workshop-Beitrag], (2016)

2015

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1149/2.0021507jss]
In: ECS Journal of Solid State Science and Technology, 4 (5) Q46-Q50.
[Artikel], (2015)

2014

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Field Effect Transistor Arrangement.
[Online-Edition: https://patentscope.wipo.int/search/en/detail.jsf?docId=WO20...]

[Norm, Patent, Standard], (2014)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Feldeffekttransistor-Anordnung.
[Online-Edition: https://depatisnet.dpma.de/DepatisNet/depatisnet?action=bibd...]

[Norm, Patent, Standard], (2014)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1149/06412.0011ecst ]
In: ECS Transactions, 64 (12) pp. 11-24.
[Artikel], (2014)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
An Electrostatically Doped Planar Device Concept.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850650]
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2014)

2013

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann :
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
[Online-Edition: http://idtsymposium.org/]
In: 8th International Design and Test Symposium (IDT), 16.-18.12.2013, Marrakesh, Morocco.
[Konferenz- oder Workshop-Beitrag], (2013)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
[Online-Edition: http://dx.doi.org/10.1016/j.mejo.2012.08.004]
In: Microelectronics Journal, 44 (12) pp. 1072-1076.
[Artikel], (2013)

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann :
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
[Online-Edition: http://dx.doi.org/10.1149/05305.0105ecst]
In: ECS Transactions, 53 (5) pp. 105-114.
[Artikel], (2013)

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann :
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
[Online-Edition: http://dx.doi.org/10.1149/2.002307jss]
In: ECS Journal of Solid State Science and Technology, 2 (6) Q88-Q93.
[Artikel], (2013)

2012

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Dopant-free CMOS: A New Device Concept.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232949]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-3.
[Artikel], (2012)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.04.017]
In: Solid-State Electronics, 74 pp. 91-96.
[Artikel], (2012)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
[Online-Edition: http://dx.doi.org/10.1016/j.sse.2011.11.011]
In: Solid-State Electronics, 70 pp. 33-38.
[Artikel], (2012)

2011

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
[Online-Edition: http://dx.doi.org/10.1016/j.mee.2010.05.013]
In: Microelectronic Engineering, 88 (12) pp. 3393-3398.
[Artikel], (2011)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2011.6044184]
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC) pp. 263-266.
[Artikel], (2011)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI) pp. 41-42.
[Artikel], (2011)

2010

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo :
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
[Online-Edition: http://dx.doi.org/10.1149/1.3483505]
In: ECS Transactions, 33 (4) pp. 169-173.
[Artikel], (2010)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
[Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2010.5617754]
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC) pp. 356-358.
[Artikel], (2010)

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo :
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2010.5487572]
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-3.
[Artikel], (2010)

2009

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
In: 40th IEEE Semiconductor Interface Specialists Conference (SISC), 03.-05.12.2009, Arlington, VA, USA.
[Konferenz- oder Workshop-Beitrag], (2009)

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
[Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414209]
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
[Artikel], (2009)

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