Pia Juliane Wessely

Profilbild P.J. Wessely

Dr.-Ing. M.Sc. Pia Juliane Wessely

+49 6151 16-20051
+49 6151 16-21514

Hochschulstraße 6
64289 Darmstadt

Raum: S2|07 110

Mehr Informationen

Derzeit tätig in der Vorlesungsassistenz der Festkörperphysik der TU Darmstadt.


Forschungsschwerpunkt am IHTN

  • Elektronische und optoelektronische Graphen-Bauelemente im Rahmen des Forschungsprojekts ELOGRAPH

Best Paper Award der DTIS 2013

Best Paper Award - DTIS 2013 - Verleihung

Der Beitrag von Pia Juliane Wessely zur IEEE-Fachtagung zum Thema „Design and Technology of Integrated Systems“ (DTIS) wurde mit dem Best Paper Award ausgezeichnet. Mehr…

Artikel im Dieburger Anzeiger und in der Offenbach-Post

Zeitung 2012 - P.J. Wessely 1

In den Ausgaben vom 3. März 2012 sind jeweils Artikel im Dieburger Anzeiger und in der Offenbach-Post über M.Sc. Wessely erschienen.

(Mit freundlicher Genehmigung von Jens Dörr, Journalist und Pressefotograf, www.jensdoerr.com)

Publikationen

Gruppiere nach: Datum | Typ des Eintrags | Keine Gruppierung
Springe zu: 2016 | 2014 | 2013 | 2012 | 2011
Anzahl der Einträge: 24.

2016

Wessely, Pia Juliane ; Schwalke, Udo
Aliofkhazraei, Mahmood ; Ali, Nasar ; Milne, William I. ; Ozkan, Cengiz S. ; Mitura, Stanislaw ; Gervasoni, Juana L. (eds.) :

Graphene Transistors: Silicon CMOS-Compatible Processing for Applications in Nanoelectronics.
[Online-Edition: https://www.crcpress.com/Graphene-Science-Handbook-Size-Depe...]
In: Graphene Science Handbook: Size-Dependent Properties. CRC Press ISBN 9781466591363
[Buchkapitel], (2016)

2014

Schwalke, Udo ; Wessely, Pia Juliane :
Improved Bilayer Graphene Transistors for Applications in Nanoelectronics.
[Online-Edition: https://www.electrochem.org/meetings/biannual/226/]
In: 226th Meeting of the Electrochemical Society (ECS), 05.-10.10.2014, Cancún, Mexico.
[Konferenz- oder Workshop-Beitrag], (2014)

Sivieri, Victor de Bodt ; Wessely, Pia Juliane ; Schwalke, Udo ; Agopian, Paula G. D. ; Martino, João A. :
Graphene for Advanced Devices Applications.
[Online-Edition: http://www.chip-in-aracaju.ufs.br/sbmicro.php]
In: SBMicro 2014 - 29th Symposium on Microeletronics Technology and Devices, 01.-05.09.2014, Aracaju, Sergipe, Brazil.
[Konferenz- oder Workshop-Beitrag], (2014)

Wessely, Pia Juliane ; Schwalke, Udo :
2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850651]
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2014)

Wessely, Pia Juliane ; Schwalke, Udo :
In-Situ CCVD Grown Bilayer Graphene Transistors for Applications in Nanoelectronics.
[Online-Edition: http://dx.doi.org/10.1016/j.apsusc.2013.09.142]
In: Applied Surface Science, 291 pp. 83-86.
[Artikel], (2014)

2013

Wessely, Pia Juliane ; Schwalke, Udo :
Graphene Transistors: Silicon CMOS Compatible Processing for Applications in Nanoelectronics.
[Online-Edition: http://www.emrs-strasbourg.com/index.php?option=com_content&...]
In: E-MRS 2013 Spring Meeting, 27.-30.05.2012, Strasbourg, France.
[Konferenz- oder Workshop-Beitrag], (2013)

Wessely, Pia Juliane ; Schwalke, Udo :
Transfer-free Bilayer Graphene FETs: Application as Memory Devices.
[Online-Edition: http://dx.doi.org/10.1149/05301.0131ecst]
In: ECS Transactions, 53 (1) pp. 133-137.
[Artikel], (2013)

Wessely, Pia Juliane :
Graphen-Transistoren: Silizium CMOS kompatible Herstellung für Anwendungen in der Nanoelektronik.
[Online-Edition: http://tuprints.ulb.tu-darmstadt.de/3435]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2013)

Wessely, Pia Juliane ; Schwalke, Udo :
Transfer-Free Grown Bilayer Graphene Memory Devices.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2013.6527769]
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2013)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Transfer-free grown bilayer graphene transistors for digital applications.
[Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.12.008]
In: Solid-State Electronics, 81 pp. 86-90.
[Artikel], (2013)

2012

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
[Online-Edition: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258]
In: Advances in Science and Technology, 77 pp. 258-265.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
[Online-Edition: http://www.graphene-week.eu/]
In: Graphene Week 2012, 04.-08.06.2012, Delft, Netherlands.
[Konferenz- oder Workshop-Beitrag], (2012)

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo :
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232952]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-3.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232950]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2012)

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine :
Nanoelectronics: From Silicon to Graphene.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232951]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
[Online-Edition: http://link.aip.org/link/?ECA/1201/755]
In: 221th Meeting of the Electrochemical Society, 06.-11.05.2012, Seattle, WA, USA.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
[Online-Edition: http://dx.doi.org/10.1149/1.3700449]
In: ECS Transactions, 45 (4) pp. 23-30.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo ; Riedinger, Bernadette :
Transfer-free Fabrication of Graphene Transistors.
[Online-Edition: http://dx.doi.org/10.1116/1.4711128]
In: Journal of Vacuum Science & Technology B, 30 (3) 03D114-1.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
[Online-Edition: http://www.mrs.org/s12-program-ee/#tab4]
In: Spring Meeting & Exhibit 2012 of the Materials Research Society, 09.-13.04.2012, San Francisco, CA, USA.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
[Online-Edition: http://www.phantomsnet.net/Graphene_Conf/2012/Abstracts/2012...]
In: Graphene 2012, 10.-13.04.2012, Brussels, Belgium.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Hysteresis of In Situ CCVD Grown Graphene Transistors.
[Online-Edition: http://dx.doi.org/10.1149/2.019204esl]
In: Electrochemical and Solid-State Letters, 15 (4) K31-K34.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
In Situ CCVD Grown Bilayer Graphene Transistor.
[Online-Edition: http://dx.doi.org/10.1149/1.3703508]
In: ECS Transactions, 41 (40) pp. 1-5.
[Artikel], (2012)

2011

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo :
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
[Online-Edition: http://dx.doi.org/10.1016/j.physe.2011.12.022]
In: Physica E: Low-dimensional Systems and Nanostructures, 44 (7-8) pp. 1132-1135.
[Artikel], (2011)

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Keyn, Martin ; Rispal, Lorraine :
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
[Online-Edition: http://www.tntconf.org/2011/abstracts_TNT2011/TNT2011_Schwal...]
In: 12th Trends in Nanotechnology International Conference (TNT), 21.-25.11.2011, Tenerife, Canary Islands, Spain.
[Konferenz- oder Workshop-Beitrag], (2011)

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